What to Expect
Terafabis building a vertically integrated semiconductor factoryatan unprecedented scale. The facility brings logic, memory, packaging, test, and lithography mask production under one roof,optimizedfor rapid iteration andmaximumcompute density per square foot.
Process engineering is the discipline that turnsTerafabtechnology into reality, atom by atom.
This role owns ion implantation processes across three distinct chip families: edge-inference processors, space-hardened data center SI chips for orbital satellites, and high-bandwidth memory. The engineer will develop andoptimizedopant implantation, profile control, and stress engineering while balancing junction performance, thermal budget compatibility, defectivity, and integration constraints across radically different product requirements. This is a highly hands-on role requiring deepexpertisein ion implantation while collaborating closely with diffusion/anneal, thin films, etch, CMP, metallization, photo, metrology, and integration teams in one of the most ambitiousfabprograms in the world.This position is open across multiple levels. Level and title are based on experience, skills, and overall qualifications during the interview process.
What You'll Do
- Develop and qualify high-current, medium-current, and low-energy ion implantation processes,including source/drain, substrate, channel, well, and halo implants for logic and memory devices
- Optimize critical implant parameters: dopant species, energy, dose, tilt, rotation, beam current, and damage engineering to achieve precise junction profiles, sheet resistance, and leakage performance
- Own ion implant processes end-to-end: from tool installation and qualification through recipe development, beam setup optimization,particleand metal contamination control, and HVM handoff
- Qualify implant tools from installation to production readiness, including beam calibration, uniformity, angle control, wafer charging management, and chamber matching
- Analyze implant process, dopant distribution, and device performance using first-principles, physics-based approaches to understand implantation mechanisms, amorphization, channeling, and transient enhanced diffusion (TED) interactions
- Lead root cause analysis for profile shifts, device param variation, and yield issues;establishinline metrology and control strategies; and drive systematic yield improvement
- Support 24/7 manufacturing operations through rotations, on-call availability, and rapid response to critical production issues
- Drive development of next-generation implantation techniques, including plasma doping (PLAD) and advanced damage/activation strategies for sub-2nm nodes and specialized applications
What You'll Bring
- Degree in Chemical Engineering, Materials Science, Electrical Engineering, Physics, or equivalent experience
- Hands-on ion implantation process and integration engineering experience in a semiconductorfab, with strong focus onadvancedlogic or memory technologies
- Deepexpertisein ion implanters
- Proventrack recordestablishingProcess of Record (POR) for critical implant steps at advanced nodes
- Proficiencywith implantmetrology
- Strong DOE skills and statistical analysis capability
- Excellent collaboration skills with the ability to work proactively across diffusion/anneal, thin films, integration, and equipment engineering teams
- Passion for ambitious, vertically integrated semiconductor programs and building high-performancecomputetechnologies
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